@Toyota: Develop Full Surface Defect Inspection Technology for SiC Wafers Used to Make Power Semiconductors – High-speed imaging technology contributes to higher quality SiC wafers –

Kwansei Gakuin Educational Foundation (“Kwansei Gakuin University”), Toyota Tsusho Corporation (“Toyota Tsusho”), and YGK Corporation (“YGK”) announced today that they have jointly developed an inspection technology for sub-surface damage (SSD*) that occurs in the manufacturing process of silicon carbide (SiC) wafers for power semiconductors. This innovative inspection technology is one of the outcomes of a collaboration between Kwansei Gakuin University and Toyota Tsusho, initially launched in 2017, to jointly develop mass production processing technologies for high-quality SiC wafers. It is expected to improve production efficiency and to address problems faced on the frontline of semiconductor production and research.

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